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CVD로 증착된 SiO2층 및 Si3N4층을 가지는 AAO 나노채널 배열을 이용한 역전기 투석식 발전에 대한 연구
- Alternative Title
- Lee sang woo
- Author(s)
- 이상우
- Alternative Author(s)
- Lee sang woo
- Advisor
- 김동권, 유재석, 윤백
- Department
- 일반대학원 기계공학과
- Publisher
- The Graduate School, Ajou University
- Publication Year
- 2015-02
- Language
- kor
- Alternative Abstract
- It have been conducted that studies of reverse electrodialysis to convert into electric energy by using a polymer ion-exchange membrane from Gibbs energy dissipated when the seawater and fresh water are mixed. Recently, studies using solid nanochannels to improve the efficiency of the reverse electrodialysis is in progress. Especially study of porous alumina thin film is concentrated. In this study, SiO2 and Si3N4 was deposited on AAO by CVD for improving the ion-selectivity. We tried to measure the resistances and Open Circuit Voltages for various deposition thicknesses of SiO2 and Si3N4. SiO2 with 1μm and Si3N4 with 1μm thickness on AAO showed best performance, among various deposition thicknesses. The resistances and Open Circuit Voltages were measured for various concentration combinations and maximum power was calculated. Experimental results show 10-2M-1M concentration combination has the maximum power performance.
- Fulltext
- Appears in Collections:
- Graduate School of Ajou University > Department of Mechanical Engineering > 3. Theses(Master)
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