Ultra large-dynamic range IGZO neuromorphic transistors via photo-cross linked organic polymer dielectrics

Alternative Title
광가교 고분자 절연체를 이용한 높은 동적 범위의 뉴로모픽 소자
Author(s)
곽태현
Alternative Author(s)
Taehyun Kwak
Advisor
박성준
Department
일반대학원 전자공학과
Publisher
The Graduate School, Ajou University
Publication Year
2023-02
Language
kor
Keyword
Neuromorhic devicePolymer dielectricSolution process
Alternative Abstract
Because of its improved recognition and learning abilities in computing of neural network, three-terminal neuromorphic transistors have received a lot of attention. High-Synaptic weight (G) (i.e., conductance) and a broad weight update margin (i.e., dynamic range (DR)) are required for effective and speedy processing of parallel architecture and unorganized data. This research uses poly(norbornene-co-5-vinyl-2-norbornene), a cross-linked vinyl-added polynorbornene copolymer dielectric layer based on thiol-ene photoclick chemistry, to create a neuromorphic transistor with a high synaptic weight and broad dynamic range. Indium gallium zinc oxide with polymer treatment. The click reaction of the ultraviolet photoinduced thiol-ene polar cross linker pentaerythritol tetrakis(3-mercaptopropionate) (PETMP) generates free -OH groups in the insulator, activating the slow molecular depolarization effect on the IGZO semiconductor. An extensive and methodical research of the characteristics at the boundary between mating the cross-linked polymer insulator, IGZO channel showed impressive neuron behavior operation with a big channel conductance (~0.5 mS), wide dynamic range (~6200), and cycle operating stability at 104 successive pulses, resulting in accuracy of ~87% based on MNIST simulation.
URI
https://dspace.ajou.ac.kr/handle/2018.oak/24332
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Graduate School of Ajou University > Department of Electronic Engineering > 3. Theses(Master)
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