Optimization of Electronic Band Structure for Heterojunction Electronic Devices

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dc.contributor.advisor서형탁-
dc.contributor.author이상연-
dc.date.accessioned2019-08-13T16:41:21Z-
dc.date.available2019-08-13T16:41:21Z-
dc.date.issued2019-08-
dc.identifier.other29125-
dc.identifier.urihttps://dspace.ajou.ac.kr/handle/2018.oak/15586-
dc.description학위논문(박사)--아주대학교 일반대학원 :에너지시스템학과,2019. 8-
dc.description.tableofcontents1. Introduction 1 1. 1. Need for Understanding Interfaces Phenomena in Scaled Down Electronic Devices 1 1. 2. Technology Barrier Issues of Electronic Devices 3 1. 2. 1. Metal-Insulator-Metal Capacitors 3 1. 2. 2. Schottky Diode & p-n Diode 5 1. 3. Reports of Abnormal Phenomenon between Interface of Metal Oxides 6 1. 4. Spectroscopic Techniques 7 1. 4. 1. X-ray & Ultra-violet Photoelectron Spectroscopy (XPS & UPS) 7 1. 4. 2. Transmission Electron Microscope (TEM) 8 1. 4. 2. 1. Energy Electron Loss Spectroscopy (EELS) 8 1. 4. 2. 2. Energy Dispersive Spectroscopy (EDS) 9 1. 4. 3. Spectroscopic Ellipsometry (SE) 9 1. 5. Electrical Techniques 10 1. 5. 1. I-V and C-V 10 1. 5. 2. Internal Photoemission Spectroscopy (IPS) 11 1. 6. Overview of Dissertation 12 2. Band Alignment and Defect States in TiN/ZrO2 and TiN/ZAZ interfaces 14 2. 1. Introduction 14 2. 2. Experimental Procedure 16 2. 3. Results and Discussion 18 2. 4. Conclusions 31 3. Device Level Band Engineering of ZAZ dielectric in Metal-Insulator-Metal Capacitor by Internal Photoemission Spectroscopy 32 3. 1. Introduction 32 3. 2. Experimental Procedure 34 3. 3. Results and Discussion 35 3. 4. Conclusion 44 4. Interface Engineering of p-doped SLG/i-SiC stacks using F Intercalation for Schottky Diode 45 4. 1. Introduction 45 4. 2. Experimental Procedure 47 4. 2. 1. Preparation of p-SLG/i-SiC 47 4. 2. 2 Characterization of p-SLG/i-SiC 47 4. 3. Results and Discussion 49 4. 3. 1 Electrical transport properties of SiC Schottky diodes. 49 4. 3. 2 Characterization chemical binding states following F intercalation. 52 4. 3. 3 Variation of Raman vibration mode of buffer layer after fluorination. 56 4. 3. 4 Generation/Mechanism of Single layer graphene/fluorine intercalation SiC. 60 4. 4. Conclusion 71 5. Fabrication of Rectifying Controllable TiO2/Si p-n Diode by UV Irradiation 72 5. 1. Introduction 72 5. 2. Experimental Procedure 74 5. 3. Results and Discussion 75 5. 4. Conclusion 89 6. Realization of Quasi Two-dimensional Electron Gas Channel of Al2O3/In2O3 Interfaces 90 6. 1. Introduction 90 6. 2. Experimental Procedure 93 6. 2. 1. Fabrication of Al2O3/In2O3 heterostructures 93 6. 2. 2. Electrical measurement 93 6. 2. 3. Analysis of the heterostructure properties 93 6. 3. Results and Discussion 95 6. 4. Conclusion 112 7. Conclusion and Future Work 113 Bibliography 114-
dc.language.isoeng-
dc.publisherThe Graduate School, Ajou University-
dc.rights아주대학교 논문은 저작권에 의해 보호받습니다.-
dc.titleOptimization of Electronic Band Structure for Heterojunction Electronic Devices-
dc.typeThesis-
dc.contributor.affiliation아주대학교 일반대학원-
dc.contributor.department일반대학원 에너지시스템학과-
dc.date.awarded2019. 8-
dc.description.degreeDoctoral-
dc.identifier.localId951952-
dc.identifier.uciI804:41038-000000029125-
dc.identifier.urlhttp://dcoll.ajou.ac.kr:9080/dcollection/common/orgView/000000029125-
dc.description.alternativeAbstractSemiconductor devices are required to have high performance and versatility with the advent of the 4th Industrial Revolution so that the size of semiconductor unit devices is continuously decreasing. As the size of the entire device approaches to the size of several tens of nm, the portion occupied by the heterogeneous junction in the terminal device is not small even if the interface size is only sub-nm. In the past, it was sufficient to understand the behavior of the device by merely analyzing the electronic structure of each material. However, nowadays, it has become essential to understand the defect structure of the interface and the electron transport behavior at the interface. The goal of this work is to describe the electronic band structure of various electronic devices according to the metal-insulator-metal capacitor, Schottky diode, p-n diode, and quasi-2DEG channel between heterojunction oxides, respectively. The defects of the valence band and the core-level analysis of each element was carried out using various spectroscopic analysis. The behaviors at each interface were explained by suggesting the band alignment model by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, energy electron loss spectroscopy, spectroscopic ellipsometry, and internal photoemission spectroscopy. In the case of the MIM capacitor, it is possible to compare and analyze the behavior with an intrinsic level device through analysis of defect behavior at the working device level. As a result, the phenomena of electronic behavior and electrical characteristics of various electronic devices are explained through the understanding of the interface of electronic structure. Besides, the quasi-2DEG channel was implemented based on the knowledge of the interfaces of these electronic structures, and the mechanism of 2DEG expression has been clarified.-
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Graduate School of Ajou University > Department of Energy Systems > 4. Theses(Ph.D)
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