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Optimization of Electronic Band Structure for Heterojunction Electronic Devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 서형탁 | - |
| dc.contributor.author | 이상연 | - |
| dc.date.accessioned | 2019-08-13T16:41:21Z | - |
| dc.date.available | 2019-08-13T16:41:21Z | - |
| dc.date.issued | 2019-08 | - |
| dc.identifier.other | 29125 | - |
| dc.identifier.uri | https://dspace.ajou.ac.kr/handle/2018.oak/15586 | - |
| dc.description | 학위논문(박사)--아주대학교 일반대학원 :에너지시스템학과,2019. 8 | - |
| dc.description.tableofcontents | 1. Introduction １ 1. 1. Need for Understanding Interfaces Phenomena in Scaled Down Electronic Devices １ 1. 2. Technology Barrier Issues of Electronic Devices ３ 1. 2. 1. Metal-Insulator-Metal Capacitors ３ 1. 2. 2. Schottky Diode & p-n Diode ５ 1. 3. Reports of Abnormal Phenomenon between Interface of Metal Oxides ６ 1. 4. Spectroscopic Techniques ７ 1. 4. 1. X-ray & Ultra-violet Photoelectron Spectroscopy (XPS & UPS) ７ 1. 4. 2. Transmission Electron Microscope (TEM) ８ 1. 4. 2. 1. Energy Electron Loss Spectroscopy (EELS) ８ 1. 4. 2. 2. Energy Dispersive Spectroscopy (EDS) ９ 1. 4. 3. Spectroscopic Ellipsometry (SE) ９ 1. 5. Electrical Techniques １０ 1. 5. 1. I-V and C-V １０ 1. 5. 2. Internal Photoemission Spectroscopy (IPS) １１ 1. 6. Overview of Dissertation １２ 2. Band Alignment and Defect States in TiN/ZrO2 and TiN/ZAZ interfaces １４ 2. 1. Introduction １４ 2. 2. Experimental Procedure １６ 2. 3. Results and Discussion １８ 2. 4. Conclusions ３１ 3. Device Level Band Engineering of ZAZ dielectric in Metal-Insulator-Metal Capacitor by Internal Photoemission Spectroscopy ３２ 3. 1. Introduction ３２ 3. 2. Experimental Procedure ３４ 3. 3. Results and Discussion ３５ 3. 4. Conclusion ４４ 4. Interface Engineering of p-doped SLG/i-SiC stacks using F Intercalation for Schottky Diode ４５ 4. 1. Introduction ４５ 4. 2. Experimental Procedure ４７ 4. 2. 1. Preparation of p-SLG/i-SiC ４７ 4. 2. 2 Characterization of p-SLG/i-SiC ４７ 4. 3. Results and Discussion ４９ 4. 3. 1 Electrical transport properties of SiC Schottky diodes. ４９ 4. 3. 2 Characterization chemical binding states following F intercalation. ５２ 4. 3. 3 Variation of Raman vibration mode of buffer layer after fluorination. ５６ 4. 3. 4 Generation/Mechanism of Single layer graphene/fluorine intercalation SiC. ６０ 4. 4. Conclusion ７１ 5. Fabrication of Rectifying Controllable TiO2/Si p-n Diode by UV Irradiation ７２ 5. 1. Introduction ７２ 5. 2. Experimental Procedure ７４ 5. 3. Results and Discussion ７５ 5. 4. Conclusion ８９ 6. Realization of Quasi Two-dimensional Electron Gas Channel of Al2O3/In2O3 Interfaces ９０ 6. 1. Introduction ９０ 6. 2. Experimental Procedure ９３ 6. 2. 1. Fabrication of Al2O3/In2O3 heterostructures ９３ 6. 2. 2. Electrical measurement ９３ 6. 2. 3. Analysis of the heterostructure properties ９３ 6. 3. Results and Discussion ９５ 6. 4. Conclusion １１２ 7. Conclusion and Future Work １１３ Bibliography １１４ | - |
| dc.language.iso | eng | - |
| dc.publisher | The Graduate School, Ajou University | - |
| dc.rights | 아주대학교 논문은 저작권에 의해 보호받습니다. | - |
| dc.title | Optimization of Electronic Band Structure for Heterojunction Electronic Devices | - |
| dc.type | Thesis | - |
| dc.contributor.affiliation | 아주대학교 일반대학원 | - |
| dc.contributor.department | 일반대학원 에너지시스템학과 | - |
| dc.date.awarded | 2019. 8 | - |
| dc.description.degree | Doctoral | - |
| dc.identifier.localId | 951952 | - |
| dc.identifier.uci | I804:41038-000000029125 | - |
| dc.identifier.url | http://dcoll.ajou.ac.kr:9080/dcollection/common/orgView/000000029125 | - |
| dc.description.alternativeAbstract | Semiconductor devices are required to have high performance and versatility with the advent of the 4th Industrial Revolution so that the size of semiconductor unit devices is continuously decreasing. As the size of the entire device approaches to the size of several tens of nm, the portion occupied by the heterogeneous junction in the terminal device is not small even if the interface size is only sub-nm. In the past, it was sufficient to understand the behavior of the device by merely analyzing the electronic structure of each material. However, nowadays, it has become essential to understand the defect structure of the interface and the electron transport behavior at the interface. The goal of this work is to describe the electronic band structure of various electronic devices according to the metal-insulator-metal capacitor, Schottky diode, p-n diode, and quasi-2DEG channel between heterojunction oxides, respectively. The defects of the valence band and the core-level analysis of each element was carried out using various spectroscopic analysis. The behaviors at each interface were explained by suggesting the band alignment model by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, energy electron loss spectroscopy, spectroscopic ellipsometry, and internal photoemission spectroscopy. In the case of the MIM capacitor, it is possible to compare and analyze the behavior with an intrinsic level device through analysis of defect behavior at the working device level. As a result, the phenomena of electronic behavior and electrical characteristics of various electronic devices are explained through the understanding of the interface of electronic structure. Besides, the quasi-2DEG channel was implemented based on the knowledge of the interfaces of these electronic structures, and the mechanism of 2DEG expression has been clarified. | - |
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- Graduate School of Ajou University > Department of Energy Systems > 4. Theses(Ph.D)
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