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Fabrication and Characterization of Nano-scale Gap Controlled Single-Walled Carbon Nanotubes Device
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | JAE-HO KIM | - |
| dc.contributor.author | Nur Elida Mohamad Zahari | - |
| dc.date.accessioned | 2018-11-08T08:05:32Z | - |
| dc.date.available | 2018-11-08T08:05:32Z | - |
| dc.date.issued | 2013-08 | - |
| dc.identifier.other | 15229 | - |
| dc.identifier.uri | https://dspace.ajou.ac.kr/handle/2018.oak/10375 | - |
| dc.description | 학위논문(석사)아주대학교 일반대학원 :분자과학기술학과,2013. 8 | - |
| dc.description.tableofcontents | List of contents List of Figures 1 List of table 3 Abbreviations. 4 ABSTRACT 5 CHAPTER 1. GENERAL INTRODUCTION 1.1 Carbon nanotubes 8 1.2 Electrical properties of carbon nanotubes 11 1.3 Applications of Carbon Nanotubes12 1.4 Nano-scale SWNTs device 12 1.5 Literature review 13 1.6 Potential application of nano-scale SWNTs device 16 1.7 Problem statement 17 1.8 Objective and scope of study 18 1.9 References 19 CHAPTER 2. EXPERIMENTAL SECTION 2.1 Overall process 25 2.2 Preparation of SWNTs solution 27 2.2.1 Surface modification of SWNTs 27 2.2.2 Placement and alignment of SWNTs 28 2.3 Fabrication of nano-scale gap 2.3.1 Fabrication of multi-segment nanorod via electrochemical deposition 30 2.3.2 Control of gap distance 31 2.4 Fabrication of SWNTs device 32 2.4.2 I-V measurement 33 2.4.3 Characterization 34 CHAPTER 3. RESULTS AND DISCUSSION 3.1 Individual SWNT dispersion 36 3.2 Optimization of sonication distance 40 3.3 Optimization of SWNTs solution concentration41 3.4 Mass production of multi-segment nanorod 42 3.5 Micro-Raman analysis 43 3.6 Gap controlled of SWNTs device 45 3.7 Fabrication of SWNTs device 47 3.8 Electrical properties 3.8.1 Electrical contact bonding 48 3.8.2 Effect of gap distance to I-V measurement 50 4.0 Conclusions 54 4.1 References 56 | - |
| dc.language.iso | eng | - |
| dc.publisher | The Graduate School, Ajou University | - |
| dc.rights | 아주대학교 논문은 저작권에 의해 보호받습니다. | - |
| dc.title | Fabrication and Characterization of Nano-scale Gap Controlled Single-Walled Carbon Nanotubes Device | - |
| dc.title.alternative | 나노미터 수준으로 갭이 조절된 단일벽 탄소나노튜브 전자소자 제작 및 특성 평가 | - |
| dc.type | Thesis | - |
| dc.contributor.affiliation | 아주대학교 일반대학원 | - |
| dc.contributor.department | 일반대학원 분자과학기술학과 | - |
| dc.date.awarded | 2013. 8 | - |
| dc.description.degree | Master | - |
| dc.identifier.localId | 571107 | - |
| dc.identifier.url | http://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000015229 | - |
| dc.description.alternativeAbstract | Nano-scale gap Single-Walled Carbon Nanotubes (SWNTs) device has emerged as an excellent candidate for nanoelectronic and sensor application. The small diameter of carbon nanotubes almost matches to the chemical and biological size of the interacting species causing more contact of surface areas which allows better signal transfer in the device. Carbon nanotubes’ one dimensional structure and its high current mobility also make it the suitable candidate for nano-scale electrical interconnect material. In this study, we had successfully controlled the gap distance of SWNTs devices and fabricated devices with three different gap distances. Nano-scale gap SWNTs devices are fabricated by combining ultrasonication, filtration and electrochemical deposition method. The overall experimental procedure is divided into three steps. For the first step, we carried out the process of preparing SWNTs solution which involves the surface modification and the technique of positioning SWNTs into AAO channels. We had successfully centralized the SWNTs in AAO channels. This condition is important for mass production of the nano-scale gap device containing SWNTs, stable SWNTs electrical contact as well as excellent charge carrier flow properties. In the second step, multi-segmented nanorods (Au-Ni-Au) are grown inside the AAO channels. The SWNTs gap distances are controlled and created by disolving the Ni from the nanorod. Thus, SWNTs devices with precisely controlled gap distances are obtained. The controlled gap distances are of 34 ± 6 nm, 66 ± 3 nm and 107 ± 22 nm, respectively. The presences of SWNTs attached to both Au nanorods are confirmed by Micro-Raman spectroscopy. The Raman spectra shows G-band peak at 1592 cm-1, which indicates the semiconducting property of carbon nanotubes. The I-V measurement performed using semiconductor parameter analyzer, shows that small gap distance possess higher charge mobility compared to longer gap distance. The I-V curve also reveals the semiconducting property with Schottky barrier effect while the three terminal SWNTs device shows the FET property. From this study we demonstrate an easy and effective method to fabricate nano-scale gap controlled SWNT devices with optimized fabrication condition. | - |
| dc.title.subtitle | Single-Walled Carbon Nanotubes Nanogap Device | - |
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- Graduate School of Ajou University > Department of Molecular Science and Technology > 3. Theses(Master)
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