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Metalorganic chemical vapor deposition을 이용한 P-type ZnO 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 조중열 | - |
| dc.contributor.author | 김해미 | - |
| dc.date.accessioned | 2018-11-08T07:53:17Z | - |
| dc.date.available | 2018-11-08T07:53:17Z | - |
| dc.date.issued | 2010-02 | - |
| dc.identifier.other | 10534 | - |
| dc.identifier.uri | https://dspace.ajou.ac.kr/handle/2018.oak/8487 | - |
| dc.description | 학위논문(석사)--아주대학교 일반대학원 :전자공학과,2010. 2 | - |
| dc.description.tableofcontents | 국 문 요 약 제 Ⅰ 장. 서 론 제 Ⅱ 장. 본 론 제 1 절. ZnO 박막 성장 및 ZnO-TFT, ZnO-Capacitor 제작 제 2 절. Growth interruption 방법을 이용한 ZnO-TFT 제 3 절. P-type ZnO 성장을 위한 불순물 연구 제 1 항. GaAs를 불순물 공급원으로 사용한 ZnO 박막 성장 제 2 항. N2O를 사용한 ZnO 박막 성장 1. N2O를 사용한 ZnO-TFT 2. N2O를 사용한 ZnO 박막의 p-type 특성 제 4 절. 후 열처리 공정에 따른 ZnO 특성 변화 제 5 절. 시간에 따른 변화 제 Ⅲ 장. 결 론 참 고 문 헌 영 문 요 약 연 구 논 문 | - |
| dc.language.iso | kor | - |
| dc.publisher | The Graduate School, Ajou University | - |
| dc.rights | 아주대학교 논문은 저작권에 의해 보호받습니다. | - |
| dc.title | Metalorganic chemical vapor deposition을 이용한 P-type ZnO 연구 | - |
| dc.title.alternative | P-type ZnO grown by Metalorganic chemical vapor deposition | - |
| dc.type | Thesis | - |
| dc.contributor.affiliation | 아주대학교 일반대학원 | - |
| dc.contributor.alternativeName | Kim Haemi | - |
| dc.contributor.department | 일반대학원 전자공학과 | - |
| dc.date.awarded | 2010. 2 | - |
| dc.description.degree | Master | - |
| dc.identifier.localId | 568581 | - |
| dc.identifier.url | http://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000010534 | - |
| dc.subject.keyword | ZnO | - |
| dc.subject.keyword | TFT | - |
| dc.subject.keyword | P-type capacitance | - |
| dc.description.alternativeAbstract | ZnO(Zinc Oxide) is oxide semiconductor with wide direct bandgap(3.4 eV). It is promising Ⅱ-Ⅵ compound semiconductor for utilization in optoelectronics devices. ZnO usually shows n-type characteristics due to various defects. n-type defects make p-type doping very difficult, since acceptor doping should compensate all the n-type defects. We developed a new method to realize enhancement-mode ZnO thin-film transistors (TFT) and studied effect of N2O and GaAsdoping in ZnO by metalorganic chemical vapor deposition (MOCVD). We used growth interruptions during MOCVD to encourage complete oxidation of deposited ZnO film. With this method, turn-off characteristics were significantly improved, and threshold voltage was shifted to positive voltage. Capacitance data showed that there is significant carrier depletion at the ZnO/dielectric interface, and that the depletion was sensitive to vacuum annealing. Capacitance measured in N2O doped ZnO increased at negative gate voltages, which indicates positive charge increase in ZnO. | - |
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- Graduate School of Ajou University > Department of Electronic Engineering > 3. Theses(Master)
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