Multi RESURF LDMOS의 항복전압 및 Ron 저항

DC Field Value Language
dc.contributor.advisor정상구-
dc.contributor.author최이권-
dc.date.accessioned2018-11-08T07:41:18Z-
dc.date.available2018-11-08T07:41:18Z-
dc.date.issued2003-
dc.identifier.other7445-
dc.identifier.urihttps://dspace.ajou.ac.kr/handle/2018.oak/7097-
dc.description학위논문(석사)--아주대학교 대학원 :전자공학과,2003-
dc.language.isokor-
dc.publisherThe Graduate School, Ajou University-
dc.rights아주대학교 논문은 저작권에 의해 보호받습니다.-
dc.titleMulti RESURF LDMOS의 항복전압 및 Ron 저항-
dc.typeThesis-
dc.contributor.affiliation아주대학교 일반대학원-
dc.contributor.department일반대학원 전자공학과-
dc.date.awarded2003. 2-
dc.description.degreeMaster-
dc.identifier.localId563060-
dc.identifier.urlhttp://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000007445-
Appears in Collections:
Graduate School of Ajou University > Department of Electronic Engineering > 3. Theses(Master)
Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse