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GaAs 기판 위에 성장시킨 고효율 InGaP/InGaAs 이중접합 태양전지의 특성
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 이재진 | - |
| dc.contributor.author | Hieu, Nguyen Pham Trung | - |
| dc.date.accessioned | 2018-11-08T07:08:33Z | - |
| dc.date.available | 2018-11-08T07:08:33Z | - |
| dc.date.issued | 2009-06 | - |
| dc.identifier.other | 10148 | - |
| dc.identifier.uri | https://dspace.ajou.ac.kr/handle/2018.oak/5260 | - |
| dc.description | 학위논문(석사)--아주대학교 일반대학원 :전자공학과,2009. 6 | - |
| dc.description.tableofcontents | Contents Acknowledgements i Abstract ii Contents iii List of figures iv List of tables vi Chapter 1. Introduction 1 Chapter 2. Background 4 Chapter 3. Experimental procudure 13 3.1 Sample fabrication 13 3.2 Measurement methods 15 Chapter 4. Results and discussion 20 Chapter 5. Conclusions 30 References 31 | - |
| dc.language.iso | eng | - |
| dc.publisher | The Graduate School, Ajou University | - |
| dc.rights | 아주대학교 논문은 저작권에 의해 보호받습니다. | - |
| dc.title | GaAs 기판 위에 성장시킨 고효율 InGaP/InGaAs 이중접합 태양전지의 특성 | - |
| dc.title.alternative | Nguyen Pham Trung Hieu | - |
| dc.type | Thesis | - |
| dc.contributor.affiliation | 아주대학교 일반대학원 | - |
| dc.contributor.alternativeName | Nguyen Pham Trung Hieu | - |
| dc.contributor.department | 일반대학원 전자공학과 | - |
| dc.date.awarded | 2009. 8 | - |
| dc.description.degree | Master | - |
| dc.identifier.localId | 567887 | - |
| dc.identifier.url | http://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000010148 | - |
| dc.subject.keyword | solar cells | - |
| dc.subject.keyword | InGaAs | - |
| dc.subject.keyword | InGaP | - |
| dc.description.alternativeAbstract | In this paper, we report on the conversion efficiency improvement in In0.50Ga0.50P/InxGa1-xAs tandem solar cells by employing metamorphic InGaAs bottom cell instead of lattice matched GaAs cell. In0.50Ga0.50P/In0.025Ga0.975As and In0.50Ga0.50P/GaAs double junction solar cells were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on GaAs substrates. High-resolution transmission electron microscopy (HR-TEM) measurement reveals the dislocation in the In0.025Ga0.975As layer which is caused by the lattice mismatch between In0.025Ga0.975As subcell and GaAs substrate. The increase of short circuit current density and decrease in open voltage circuit are attributed in bandgap decrease. Conversion efficiencies of these cells were measured to be 24.37% and 25.11% (AM1.5, 1 sun, 25oC) for the In0.50Ga0.50P/GaAs and In0.50Ga0.50P/In0.025Ga0.975As solar cells, respectively. These results prove the ability to fabricate high efficiency solar cell based on metamorphic approach with low dislocation densities. | - |
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- Graduate School of Ajou University > Department of Electronic Engineering > 3. Theses(Master)
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