3상 하이브리드 ANPC 정류기의 전류 왜곡을 이용한 스위칭 소자 고장 진단 기법

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dc.contributor.advisor이교범-
dc.contributor.author김상훈-
dc.date.accessioned2022-11-29T02:32:27Z-
dc.date.available2022-11-29T02:32:27Z-
dc.date.issued2021-02-
dc.identifier.other30488-
dc.identifier.urihttps://dspace.ajou.ac.kr/handle/2018.oak/19983-
dc.description학위논문(석사)--아주대학교 일반대학원 :전자공학과,2021. 2-
dc.description.tableofcontents제 1 장 서론 1 제 2 장 하이브리드 ANPC 정류기 4 2.1 하이브리드 ANPC 토폴로지의 회로 구성 4 2.2 하이브리드 ANPC 정류기의 스위칭 기법 6 제 3 장 IGBT/MOSFET 스위치 개방 고장 진단 10 3.1 스위치 개방 고장 특징 분석 10 3.2 단일 스위치 개방 고장 진단 방법 15 제 4 장 시뮬레이션 24 4.1 하이브리드 ANPC 정류기 시뮬레이션 구성 및 파라미터 24 4.2 개방 고장 진단 시뮬레이션 결과 25 제 5 장 실험 27 5.1 하이브리드 ANPC 정류기 실험 세트 구성 27 5.2 개방소장 진단 실험 결과 28 제 6 장 결론 31 참고문헌 32-
dc.language.isokor-
dc.publisherThe Graduate School, Ajou University-
dc.rights아주대학교 논문은 저작권에 의해 보호받습니다.-
dc.title3상 하이브리드 ANPC 정류기의 전류 왜곡을 이용한 스위칭 소자 고장 진단 기법-
dc.title.alternativeSwitch Fault Diagnosis Method Using Current Distortion of Three-Phase Hybrid ANPC Rectifier-
dc.typeThesis-
dc.contributor.affiliation아주대학교 일반대학원-
dc.contributor.alternativeNameSang-Hun Kim-
dc.contributor.department일반대학원 전자공학과-
dc.date.awarded2021. 2-
dc.description.degreeMaster-
dc.identifier.localId1202785-
dc.identifier.uciI804:41038-000000030488-
dc.identifier.urlhttp://dcoll.ajou.ac.kr:9080/dcollection/common/orgView/000000030488-
dc.subject.keyword고장진단-
dc.subject.keyword스위치-
dc.subject.keyword하이브리드-
dc.description.alternativeAbstractThis thesis proposes a fault-detection method about open-switch failures in three phase rectifiers with active switches. The basic configuration of rectifier topology is hybrid active neutral-point-clamped (ANPC) type. The hybrid ANPC circuitry comprises two different kinds of switches, which are silicon carbide-based metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and silicon insulated-gate bipolar transistors (Si IGBTs). A hybrid ANPC rectifier shows high efficiency converting AC to DC power also with low harmonics in phase currents. The open fault on the switching device is occurred by mainly thermal aging and makes distortion in phase current with degraded power efficiency. In this work, faulty cases and feature of open switch failure are analyzed in stationary reference frame. Open fault in the SiC MOSFETs makes switches cause prompt and serious distortion in the three-phase current, which are possible to detect with conventional method. On the other hand, an IGBT fault does not make any remarkable difference in current or voltage, so the novel detection method is proposed to diagnose the Si IGBT open fault. The proposed method injects a reactive current in an intermittent period to find current distortion by open fault and uses applying intended short switching state. Thus, the proposed method is based on three-phase current measurements and does not use additional hardware to find a faulty switch in a hybrid ANPC. The effectiveness of the proposed detection method is verified through PSIM computer simulations and experimental results.-
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Graduate School of Ajou University > Department of Electronic Engineering > 3. Theses(Master)
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