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육방정계 질화 붕소 (h-BN) 원자 결함으로부터 방출된 단일 광자의 Stark shift 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 이지은 | - |
| dc.contributor.author | 노기창 | - |
| dc.date.accessioned | 2019-08-13T16:41:11Z | - |
| dc.date.available | 2019-08-13T16:41:11Z | - |
| dc.date.issued | 2019-08 | - |
| dc.identifier.other | 29163 | - |
| dc.identifier.uri | https://dspace.ajou.ac.kr/handle/2018.oak/15554 | - |
| dc.description | 학위논문(석사)--아주대학교 일반대학원 :에너지시스템학과,2019. 8 | - |
| dc.description.tableofcontents | Chapter 1. Introduction Introduction 1 Chapter 2. Background knowledge 2.1 Two-dimensional (2D) materials 3 2.1.1 Transition metal dichalcogenides (TMDCs) 5 2.1.2 Graphene 5 2.1.3. Hexagonal boron nitride (h-BN) 6 2.2 Single photon emitters in 2D materials 7 2.3 Single photon emitters in h-BN atomic defects 10 2.4 Spectral tuning of single photon emitters in h-BN 13 2.5 Basic theory of Stark shift in a defect dipole moment 15 Chapter 3. Device fabrication and measurement set-up 3.1 Device fabrication 17 3.2 Optical measurement set-up 22 3.3 Electrical measurement 24 Chapter 4. Single photon emitters in h-BN 4.1 Characterization of single photon emitters in h-BN 25 4.2 Polarization dependence 29 Chapter 5. Electrical tuning of single photon emitters in h-BN atomic defects 5.1 The linear Stark shift in h-BN single photon emitters 32 5.2 Various Stark shifts in h-BN single photon emitters 37 5.3 Theoretical simulation of linear Stark shifts 41 5.4 The gate-induced discrete intensity change in defect emission 44 Chapter 6. Future work and conclusion 6.1 Future work 47 6.2 Conclusion 49 Bibliography 50 | - |
| dc.language.iso | eng | - |
| dc.publisher | The Graduate School, Ajou University | - |
| dc.rights | 아주대학교 논문은 저작권에 의해 보호받습니다. | - |
| dc.title | 육방정계 질화 붕소 (h-BN) 원자 결함으로부터 방출된 단일 광자의 Stark shift 연구 | - |
| dc.title.alternative | Gichang Noh | - |
| dc.type | Thesis | - |
| dc.contributor.affiliation | 아주대학교 일반대학원 | - |
| dc.contributor.alternativeName | Gichang Noh | - |
| dc.contributor.department | 일반대학원 에너지시스템학과 | - |
| dc.date.awarded | 2019. 8 | - |
| dc.description.degree | Master | - |
| dc.identifier.localId | 952158 | - |
| dc.identifier.uci | I804:41038-000000029163 | - |
| dc.identifier.url | http://dcoll.ajou.ac.kr:9080/dcollection/common/orgView/000000029163 | - |
| dc.description.alternativeAbstract | Solid-state defects, such as diamond NV-centers, SiC divacancies have been studied as single photon emitters, which are fundamental resources of quantum information technology. Together with these solid-state emitters, 2D materials such as transition metal dichalcogenides and hexagonal boron nitride (h-BN) have also attracted much recent attention as new candidate materials possessing single photon emitters. Among these, atomic defects in h-BN are expected to be particularly promising for 2D-based future quantum information applications owing to emerging single photon emitters operating at room temperature. However, to use h-BN for quantum applications, their emission energy needs to be controlled. Here, we show the Stark shift induced energy control of single photon emitters in h-BN by fabricating h-BN/graphene van der Waals heterostructures. Upon the application of a vertical electric field, we observed various types of Stark shifts including linear, quadratic and V-shaped from h-BN emitters. In particular, the frequently observed linear Stark shifts suggest the existence of the out-of-plane dipole in the defect’s crystal structure, which is supported by theoretical calculations. Also, we observed the discrete change of the emission intensities induced by an applied electric field. Altogether, our observation on the electrical tuning of h-BN single photon emitters shows the potential of 2D-based photonic quantum information applications. | - |
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- Graduate School of Ajou University > Department of Energy Systems > 3. Theses(Master)
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