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Graduate School of Ajou University Department of Electronic Engineering 3. Theses(Master)

Study of Intraband absorption in InGaN disk of a GaN/AlGaN core-shell nanowire

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dc.contributor.advisorJunseok Heo-
dc.contributor.authorAKTER, AFROJA-
dc.date.accessioned2018-11-08T08:16:36Z-
dc.date.available2018-11-08T08:16:36Z-
dc.date.issued2016-08-
dc.identifier.other22773-
dc.identifier.urihttps://dspace.ajou.ac.kr/handle/2018.oak/12186-
dc.description학위논문(석사)--아주대학교 일반대학원 :전자공학과,2016. 8-
dc.description.tableofcontentsChapter 1 Introduction 1 1.1 Motivation 1 1.2 Brief discussion of growth Technique of Nanowire 4 1.2.1 Molecular Beam Epitaxy (MBE) 4 1.2.1.1 Growth of GaN nanowire using MBE 5 1.2.1.2 Growth of (In,Ga)N insertions in GaN nanowires using MBE 5 1.3 Wurtzite InGaN structure and Properties 6 1.3.1 Strain effect in InGaN/GaN heterostructure 7 1.3.2 Quantum confined stark effect 9 1.4 Target 10 1.5 Thesis Organizations 11 Chapter2 12 Theory of Intraband absorption 12 2.1 Intraband transitions in Bulk Semiconductor 13 2.2 Intraband transitions in Quantum well (QWs) 13 2.3 Intraband transitions in Quantum Dot(QD) 16 Chapter3 18 Simulation Details 18 3.1 Strain calculation of nanowire 19 3.2 Electronic states and Single band model 19 3.2.1 Intraband Momentum matrix of the nano-disk 20 3.3AlGaN cladding effect on intraband absorption of InGaN disk embedded in GaN nanowire 21 3.4 Intraband absorption modeling for embedded InGaN disk in a GaN /AlGaN Core-shell nanowire 28 3.4.1Conduction band profile and intraband absorption including strain distribution 28 3.4.2Electronic states & Energy spacing calculation 32 Chapter4 34 Experimental analysis 34 4.1 Fourier transform infrared spectroscopy (FTIR) 36 4.1.1 Working Principle 37 Chapter5 40 Conclusion & Suggestions for prospective applications 40 5.1 Conclusion 40 5.2 Prospective applications 41 References 42-
dc.language.isoeng-
dc.publisherThe Graduate School, Ajou University-
dc.rights아주대학교 논문은 저작권에 의해 보호받습니다.-
dc.titleStudy of Intraband absorption in InGaN disk of a GaN/AlGaN core-shell nanowire-
dc.typeThesis-
dc.contributor.affiliation아주대학교 일반대학원-
dc.contributor.department일반대학원 전자공학과-
dc.date.awarded2016. 8-
dc.description.degreeMaster-
dc.identifier.localId758656-
dc.identifier.urlhttp://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000022773-
dc.description.alternativeAbstractThis thesis investigates the intraband absorption in a InGaN disk of GaN/AlGaN core-shell nanowire. First, how the cladding of AlGaN plays significant role to enhance the intraband absorption intensity and energy after modifing the internal electric field of the quantum disk of In0.3Ga0.7N in a GaN nanowire comparing with palin GaN nanowire investigated. Presence of cladding material in the nanowire makes more centralized electron probability density in the conduction band. Hence cladding overcome the band bending effect and enhances the overlapping of subband electronic states. As a result in a cladding nanowire the intraband absorption intensity dominate over plain nanowire. After that how the indium composition rate in the disk of cladding (Al0.4Ga0.6N layer) GaN nanowire changes the intraband absorption is investigated. With increasing In composition in the disk linearly decrease the intraband absorption intensity, with blue shift of absorption energy. Increasing In composition in the disk increase internal electric field with decrease the magnitude of the probability density of each state due to stack effect hence decrease the subband electronic states overlapping. Thus the absorption intensity become decreases. At the same time high piezoelectric field enhance the charge accumulation in the high indium disk, which increase the absorption intensity. Theoretical investigation shows the mid wavelength IR absorption for in-plane polarized light at 17.8 µm, 16.33 µm and ~15 µm for 20%, 25% and for 30% In in the disk respectively. At room temperature the FTIR measurement of the nanowire sample shows the intraband absorption from 14 to 17.96 µm with maximum peak at ~15 µm wavelength, which support the theoretical investigation. Finally here it can suggest that this nanowire can use in mid- IR optoelectronic applications.-
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