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초광대역 센서 레이더를 위한 3-10 GHz CMOS 저잡음 증폭기 설계
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 권익진 | - |
| dc.contributor.author | 이무연 | - |
| dc.date.accessioned | 2018-11-08T08:15:55Z | - |
| dc.date.available | 2018-11-08T08:15:55Z | - |
| dc.date.issued | 2016-02 | - |
| dc.identifier.other | 21637 | - |
| dc.identifier.uri | https://dspace.ajou.ac.kr/handle/2018.oak/12030 | - |
| dc.description | 학위논문(석사)--아주대학교 일반대학원 :전자공학과,2016. 2 | - |
| dc.description.tableofcontents | Chapter 1. Introduction 1 Chapter 2. Conventional UWB low noise amplifier 3 Chapter 3. Proposed low noise amplifier 6 3.1 Low noise amplifier stage 8 3.2 Buffer stage 12 3.3 Total stage 13 Chapter 4. Simulation Results 14 Chapter 5. Conclusion 24 Publications 25 References 26 국문 요약 27 | - |
| dc.language.iso | eng | - |
| dc.publisher | The Graduate School, Ajou University | - |
| dc.rights | 아주대학교 논문은 저작권에 의해 보호받습니다. | - |
| dc.title | 초광대역 센서 레이더를 위한 3-10 GHz CMOS 저잡음 증폭기 설계 | - |
| dc.title.alternative | Design of a CMOS 3-10 GHz low noise amplifier for ultrawideband (UWB) radar sensor | - |
| dc.type | Thesis | - |
| dc.contributor.affiliation | 아주대학교 일반대학원 | - |
| dc.contributor.department | 일반대학원 전자공학과 | - |
| dc.date.awarded | 2016. 2 | - |
| dc.description.degree | Master | - |
| dc.identifier.localId | 739673 | - |
| dc.identifier.url | http://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000021637 | - |
| dc.subject.keyword | Ultra-wideband | - |
| dc.subject.keyword | Low noise amplifier | - |
| dc.subject.keyword | Noise-cancelling | - |
| dc.subject.keyword | gm-boosting | - |
| dc.description.alternativeAbstract | This paper presents a low-power CMOS 3-10 GHz ultra-wideband (UWB) low noise amplifier (LNA). The proposed UWB LNA is based on common-gate stage with noise cancelling common-source stage for wideband input impedance matching and low noise figure. And, gm-boosting technique is used to reduce the current consumption of the common-gate stage without additional amplifiers. The proposed UWB LNA is designed by the 0.11 um CMOS technology. At low power operation, The LNA consumed 2.9 mW from a 1.2 V supply voltage and achieved achieves S11 better than -12.4 dB, S21 of 16.5-17.6 dB, and NF of 3.6-3.7 dB for frequencies 3-10 GHz. At low noise operation, The LNA consumed 8.3 mW and achieved S11 better than -10.7 dB, S21 of 17.5-18.7 dB, and NF of 2.4-2.9 dB for frequencies 3-10 GHz. | - |
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- Graduate School of Ajou University > Department of Electronic Engineering > 3. Theses(Master)
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