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집중 소자를 사용한 기판 집적 도파관과 소형 초고주파 회로 집적화 및 그 응용
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 이해영 | - |
| dc.contributor.author | 엄동식 | - |
| dc.date.accessioned | 2018-11-08T08:11:34Z | - |
| dc.date.available | 2018-11-08T08:11:34Z | - |
| dc.date.issued | 2017-02 | - |
| dc.identifier.other | 24064 | - |
| dc.identifier.uri | https://dspace.ajou.ac.kr/handle/2018.oak/11464 | - |
| dc.description | 학위논문(박사)--아주대학교 일반대학원 :전자공학과,2017. 2 | - |
| dc.description.tableofcontents | ACKNOWLEDGEMENTS ……………………………………………………….. i ABSTRACT …………………………………..………………………...……….. iii TABLE OF CONTENTS ……………………………………………….……….... v LIST OF FIGURES ………………………..……………….………...……….... viii LIST OF TABLES …………………………………………………….……….... xv Chapter 1 Introduction………………………..…………………………..………1 1.1. Motivation………………………………………………………………….1 1.2. Research Goal……………………………………………………………...5 1.3. Dissertation Outline…………………………………………..……………6 Chapter 2 SIW Transitions to Planar Transmission Lines Using Lumped Inductor and Capacitor………………………………………………7 2.1. Transition Study Between SIW and Planar Transmission Lines…………..7 2.2. SIW Transitions to Planar Transmission Lines Using Lumped Elements…9 2.2.1. SIW-to-Microstrip Transition………………………………………9 2.2.2. SIW-to-Coplanar Waveguide Transition……………………….…18 2.2.3. SIW-to-Grounded CPW Transition……………………………….24 Chapter 3 SIW Applications Using Lumped Element Transition…………….29 3.1. SIW Quadrature Power Divider…………………………………………29 3.2. SIW Balun………………………………………………………………...38 3.3. Half-mode SIW Amplifier……………………………………………...46 Chapter 4 Design of SIW Attenuators Using Lumped Resistors……………...54 4.1. X-band SIW Attenuator…………………………………………………..54 4.1.1. Design Consideration……………………………………………55 4.1.1.1. Tapered-SIW Part………………………………………....56 4.1.1.2. Slotted-SIW Part…………………………………………..57 4.1.1.3. Resistive pi-network…………………………………….…58 4.1.2. Simulated and Measured Results………………………………….58 4.2. Broadband Half-mode SIW Attenuator…………………………………..62 4.2.1. Design Procedure…………………………………………………63 4.2.2. Simulation and Measurement……………………………………67 Chapter 5 Broadband Half-mode SIW Components Based on Composite Right and Left-Handed Transmission Line Using Lumped Elements…………………………………………………………….73 5.1. Introduction……………………………………………………………….73 5.2. Broadband Half-mode SIW Balun Using Lumped Elements…………….76 5.2.1. Design Consideration……………………………………………..77 5.2.2. Simulation and Measurement……………………………………81 5.3. Broadband Half-mode SIW Quadrature Wilkinson Power Divider Using Lumped Elements……………………………………………………...…84 5.3.1. Design Procedure……………………………………………….85 5.3.2. Simulation and Measurement…………………………………….88 Chapter 6 Conclusion and Future work...….…………………………………..93 6.1. Conclusion.……………………………………………………………….93 6.2. Future work……………………………………………………………….95 Bibliography………………………………………………………………….…96 Vita……………………………………………………………………………..112 Publications and Presentations……………………………………………….113 Abstract in Korean………………………………………………………...…..115 | - |
| dc.language.iso | eng | - |
| dc.publisher | The Graduate School, Ajou University | - |
| dc.rights | 아주대학교 논문은 저작권에 의해 보호받습니다. | - |
| dc.title | 집중 소자를 사용한 기판 집적 도파관과 소형 초고주파 회로 집적화 및 그 응용 | - |
| dc.title.alternative | Compact Microwave Circuit Integration with Substrate Integrated Waveguide Using Lumped Elements and Its Applications | - |
| dc.type | Thesis | - |
| dc.contributor.affiliation | 아주대학교 일반대학원 | - |
| dc.contributor.alternativeName | DONG-SIK EOM | - |
| dc.contributor.department | 일반대학원 전자공학과 | - |
| dc.date.awarded | 2017. 2 | - |
| dc.description.degree | Doctoral | - |
| dc.identifier.localId | 770733 | - |
| dc.identifier.url | http://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000024064 | - |
| dc.subject.keyword | 기판 집적 도파관 | - |
| dc.description.alternativeAbstract | A novel scheme for microwave substrate integrated waveguide circuit integration and miniaturization using lumped elements is studied. This dissertation proposes three approaches to expand the substrate integrated waveguide circuit integration concept. Substrate integrated waveguide-to-planar transmission line transitions using lumped inductors and capacitors are introduced and developed. Their applications, substrate integrated waveguide quadrature power divider, balun, and amplifiers are also researched. The proposed transitions between substrate integrated waveguide and planar transmission lines show miniaturized transition structure, and proves the integration method through the new applications. Most of the proposed transition schemes yield approximately 0.8 dB ± 0.5 dB pass-band insertion losses per target band. Others such as SIW quadrature power splitter works with 4 dB ± 0.5 dB insertion loss per band of 4.2-5.5 GHz, 90° ± 5° phase variation per 4.49 to 5.9 GHz, and SIW balun works with 4 dB ± 0.5 dB insertion loss in 4.34-5.29 GHz, 180° ± 5° phase variation in 4.6-5.34 GHz. The prototype of proposed SIW amplifier demonstrates a gain of 15dB with 3 dB bandwidth of 4 GHz to 7.05 GHz. Substrate integrated waveguide attenuators using lumped resistors are suggested, which prove a new possibility to expand the substrate integrated waveguide applications. A resistive π network was structured using standard surface-mounted resistors to obtain appropriated attenuation levels. The proposed SIW attenuator features the measured attenuation levels (1, 3, 5 dB) across 8.04 to 11.12 GHz. In half-mode substrate integrated waveguide attenuator, the five attenuators (1 to 5 dB, 1 dB step) are evaluated in a broadband frequency range of 7.29 to 14.9 GHz. Novel half-mode substrate integrated waveguide balun and quadrature power divider based on composite right and left-handed structure using lumped inductors and capacitors are proposed and developed to miniaturize the SIW circuit and obtain broadband characteristic. The measured prototype of proposed half-mode substrate integrated balun shows a 1 dB amplitude imbalance and ± 5° phase difference in a frequency band of 8-13.3 GHz, 50% bandwidth. In proposed quadrature power divider, the measured amplitude, the phase difference and isolation between two output ports of the proposed structure have 1 dB, ±5° and under -15 dB in a wide frequency range of 4.1-6.68 GHz, 47.9% bandwidth, respectively. All of the components were simulated and measured to prove their excellent performances, miniaturization and integration throughout this dissertation. | - |
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- Graduate School of Ajou University > Department of Electronic Engineering > 4. Theses(Ph.D)
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