원자층 증착법을 이용한 이차원 산화물 전자 소자

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dc.contributor.advisor이상운-
dc.contributor.author정해준-
dc.date.accessioned2018-11-08T08:10:23Z-
dc.date.available2018-11-08T08:10:23Z-
dc.date.issued2017-02-
dc.identifier.other24758-
dc.identifier.urihttps://dspace.ajou.ac.kr/handle/2018.oak/11115-
dc.description학위논문(석사)--아주대학교 일반대학원 :에너지시스템학과,2017. 2-
dc.description.tableofcontents1. Abstract 2. Introduction to 2DEG 2.1 Two-dimensional Elecron gas(2DEG) 2.2 Properties of SrTiO3 2.3 Novel properties discovered in the oxide hetero structures interface 2.3.1 Interesting characteristic at LaAlO3/SrTiO3 interface 2.3.2 Quantum Hall Effect at LaAlO3/SrTiO3 interface 2.4 The possible origins of the two dimensional electron gas at oxide interfaces 2.4.1 Polar catastrophe model 2.4.2 Effect of oxygen vacancies in the film and substrate 2.4.3 Cation intermixing at the interface 3. Experiment equipment, Analysis 3.1 Atomic layer deposition 3.2 Al2O3, ZnO, SiO2 3.3 Substrate treatment 3.4 Electrical analysis 3.5 Atomic force microscopy 4. Highly sensitive gas sensor by Al2O3/SrTiO3 based oxide 4.1 Introduction 4.2 Experimental details 4.3 Results and discussion 5. Conclusion References-
dc.language.isokor-
dc.publisherThe Graduate School, Ajou University-
dc.rights아주대학교 논문은 저작권에 의해 보호받습니다.-
dc.title원자층 증착법을 이용한 이차원 산화물 전자 소자-
dc.title.alternativeThe electronic device of two-dimensional electron gas using oxide heterostructures grown by atomic layer deposition-
dc.typeThesis-
dc.contributor.affiliation아주대학교 일반대학원-
dc.contributor.department일반대학원 에너지시스템학과-
dc.date.awarded2017. 2-
dc.description.degreeMaster-
dc.identifier.localId770468-
dc.identifier.urlhttp://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000024758-
dc.subject.keywordAtomic layer depostion-
dc.description.alternativeAbstractTwo-dimensional electron gas (2DEG) at perovskite oxide heterostructure has generated intense attentions owing to their peculiar physical properties of Al2O3/SrTiO3 hetero structures.[1] Interestingly, high density electrons up to (1013~1014/cm2) were confined at the interface of Al2O3 layer grown on single crystalline STO substrate by atomic layer deposition (ALD). Its electron density is 100 times higher than that of the conventional semiconductor heterojunction, which enables high on current in the transistor. Recently, potential applications of the oxide heterostructures for gas/photo sensors have attracted great research interests. In this work, we demonstrate a highly sensitive hydrogen gas sensor using Pd-decorated Al2O3/SrTiO3 heterostructures. Surprisingly, Al2O3/SrTiO3 heterostructure with the Pd exhibited significantly high sensitivity to hydrogen gas owing to its 2-dimensional properties.-
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Graduate School of Ajou University > Department of Energy Systems > 3. Theses(Master)
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